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16.   Usman Muhammad, Hyunsung Kim, and Jong-In Shim , Theoretical and experimental analysis of blue MQW and green SQW inGaN/GaN light-emitting diodes , Asia-Pacific Workshop on WideGap Semiconductors 2015, TUP2-27, 5/17 - 5/20, 2015 , 2015
15.   Jong-In Shim and Dong-Soo Shin , Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes (LEDs) , 20th Microoptics Conference (MOC’15), Technical Digest (F1), Invited, Fukuoka, Japan, Oct. 25 - 28, 2015 , 2015
14.   Seungmin Lee , Jonghak Kim , Seunghyun Moon , Kisu Joo , Jaehoon Ham , Yoon-Kyu Song , Jong-In Shim , Yongjo Park, and Euijoon Yoon , Stress relaxation on GaN epitaxial layer by using SiO2 thin film on the backside of sapphire substrate , The 3rd International Conference on Advanced Electromaterials (ICAE 2015), LM-775, ICC Jeju, Korea,November 17-20, 2015 , 2015
13.   Dong-Soo Shin, Dong-Kuk Youn, Gyeong Won Lee, Chan-Hyoung Oh, and Jong-In Shim , Quantum-Confined Stark Effect in InGaN/GaN Multiple Quantum Wells in Blue Light-Emitting Diodes Investigated by Photocurrent Spectroscopy , The 3rd International Conference on Advanced Electromaterials (ICAE 2015), LM-605, ICC Jeju, Korea,November 17-20, 2015 , 2015
12.   Dong-Soo Shin, Won-Jin Choi, and Jong-In Shim , Performance analysis of light-emitting diodes by optoelectronic characterizations , JSAP-OSA Joint Symposia, invited, Session 4.4 Opto-electronics, Sept. 14 , 2015
11.   Dong-Soo Shin, Dong-Pyo Han, Dong-Guang Zheng, Chan-Hyoung Oh, Hyunsung Kim, Kyu-Sang Kim, and Jong-In Shim , Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques , Proc. of SPIE, vol. 9363, 93632H , 2015
10.   Jong-In Shim, Dong-Pyo Han, and Dong-Soo Shim , Method of electroluminescence metrology at the LED epi-wafer stage , The 6th International Symosium on Growth of III-Nitrides (ISGN6), We-B23, Act City Hamamatsu, Japan, November 8-13, 2015 , 2015
9.   Usman Muhammad, Hyunsung Kim, and Dong-Soo Shin , Measurement of piezoelectric field in single- and double-quantum well green LEDs using electroreflectance spectroscopy , Asia-Pacific Workshop on WideGap Semiconductors 2015, TUP2-26, 5/17 - 5/20, 2015 , 2015
8.   Chan-Hyoung Oh, Dong-Pyo Han, Dong-Soo Shin, and Jong-In Shim , Low-Frequency Noise Characteristics of InGaN-Based Light-Emitting Diodes , 11th Conference on Lasers and Electro-Optics Pacific Rim, 2015 , 2015
7.   Kyu-Sang Kim1*, Dong-Pyo Han2,Hyun-Sung Kim2, and Jong-In Shim , Investigating Charge Trap Density of InGaN Blue Light Emitting Diodes by Capacitance Dispersion Measurement , Asia-Pacific Workshop on WideGap Semiconductors 2015, TUP2-5, 5/17 - 5/20, 2015 , 2015
6.   J. Yun, J. Shim, and H. Hirayama , Efficiency Analysis of AlGaN Deep UV-LEDs based on Rate Equation , the 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), BEXCO, BUSAN, KOREA, 26P-112, 8/24 – 8/28, 2015 , 2015
5.   Gyeong Won Lee, Hyunsung Kim, Won-Jin Choi, Jong-In Shim, and Dong-Soo Shin , Correlation of the efficiency droop in InGaN LEDs between the time-resolved photoluminescence and electroluminescence , Asia-Pacific Workshop on WideGap Semiconductors 2015, MOP1-9, 5/17 - 5/20, 2015 , 2015
4.   Jong-In Shim, Wonjin Choi, and Dong-Soo Shin , Comprehensive Physical Model of InGaN-Based Visible Light-Emitting Diodes , The 3rd International Conference on Advanced Electromaterials (ICAE 2015), LM-667, invited, ICC Jeju, Korea,November 17-20, 2015 , 2015
3.   Dong-Pyo Han, Hyunsung Kim, Dong-Soo Shin, and Jong-In Shim , Change in forward-voltage characteristics due to carrier overflow in InGaN-based light-emitting diodes , Asia-Pacific Workshop on WideGap Semiconductors 2015,TUB2-3, 5/17 - 5/20, 2015 , 2015
2.   Dong-Soo Shin, Dong-Pyo Han, Young-Jin Kim, and Jong-In Shim , Carrier dynamics in InGaN-based light-emitting diodes studied by differential carrier lifetimes , Asia-Pacific Workshop on WideGap Semiconductors 2015, TUB2-2, 5/17 - 5/20, 2015 , 2015
1.   Usman Muhammad, Hyunsung Kim, and Jong-In Shim , Affect of n-doping and n-GaN thickness of the light extraction efficiency (LEE) of blue InGaN/GaN light-emitting diodes , Asia-Pacific Workshop on WideGap Semiconductors 2015, TUP2-28, 5/17 - 5/20, 2015 , 2015

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