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18.   Gang-Han Lee, Dong-Pyo Han, Hyunsung Kim, Dong-Soo Shin, Kyu-Sang Kim, and Jong-In Shim , Wafer-Level Characterization of the Efficiency Droop in InGaN-based Blue Epitaxial Wafer by the Resonant Photoluminescence , WLED 5 , 2014
17.   Gyeong Won Lee, Jong-In Shim, Dong-Soo Shin , Variationm in Series Resistance under High Device Current in InGaN-Based Light-Emitting Diodes , International Meeting in Information Display, 2014/08/26 - 29, 2014, Daegu , 2014
16.   Jong-In Shim, Hyunsung Kim and Dong-Soo Shin , On the Origin of Efficiency Droop in Light-Emitting Diodes , ISPlasma 2014/IC-PLANTS 2014, Invited , 2014
15.   Dong-Pyo Han, Dong-Guang Zheng, Chan-Hyoung Oh, Hyunsung Kim, Dong-Soo Shin, Kyu-Sang Kim, and Jong-In Shim , Nonradiative Recombination Mechanisms in InGaN-based Light-Emitting Diodes Investigated by Temperature-Dependent Measurements , WLED 5, 2014 , 2014
14.   Chan-Hyoung Oh, Dong-Pyo Han, Hyunsung Kim, Dong-Soo Shin, Kyu-Sang Kim, and Jong-In Shim , Noise Characteristics in InGaN-based Light-Emitting Diodes by External Excitation , WLED 5, 2014 , 2014
13.   Jong-In Shim, Hyunsung Kim , Dong-Pyo Han, Dong-Soo Shin, and Kyu Sang Kim , Low Temperature Studies of the Efficiency Droop in InGaN-based Light-Emitting Diodes , SPIE Photonics West 2014, OPTO (pp 246), Invited , 2014
12.   Jong-In Shim, Hyunsung Kim, and Dongsoo Shin , Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes , 2014 Asia Cimmunication and Photonics Conference (ACP), Invited, Shanghai, China, Nov. 13, 2014 , 2014
11.   J. Yun, J. Shim, and H. Hirayama , Extraction of Shockley-Read Hall and Auger Recombination Coefficient by Utilizing Theoretical Radiative Coefficient and Rate Equation in LEDs , 75th JSAP Autumn Meeting, Sapporo Campus, Hokkaido University, 9/17 – 9/20, 2014 , 2014
10.   J. Yun, J. Shim, and H. Hirayama , Extraction of Principle Parameters of Light-emitting Diodes by Utilizing Rate Equation and Relative ηEQE vs. Current Curve , 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED) 2014, Sizihwan Bay, National Sun Yat-Sen University, We-O25, 12/14 - 12/19, 2014 , 2014
9.   Kyu-Sang Kim, Dong-Pyo Han, Hyunsung Kim, and Jong-In Shim , Extracting Carrier Injection Efficiency of InGaN Light-Emitting Diodes , WLED 5, 2014 , 2014
8.   Hyo-Shik Choi, Dong-Guang Zheng, Dong-Soo Shin, and Jong-in Shim , Effects of Quantum-Well Number on the Performance of Near-ultraviolet Light-Emitting diodes , International Workshop on Nitride Semiconductors 2014, August 24-29, Wrocław, Poland, 2014 , 2014
7.   Dong-Pyo Han, Chan-Hyoung Oh, Hyunsung Kim, Dong-Soo Shin, Kyu-Sang Kim, Jong-In Shim , Conduction Mechanism of Leakage Current under Reverse Biases in InGaN/GaN-Based Light-Emitting Diodes , International Workshop on Nitride Semiconductors 2014, August 24-29, Wrocław, Poland , 2014
6.   Gyeong Won Lee, Dong-Pyo Han, Hyunsung Kim, Jong-in Shim, and Dong-Soo Shin , Comparison of Reverse-Current Conduction Mechanisms in Organic and GaN-based Light-Emitting Diodes , WLED 5 , 2014
5.   Dong-Soo Shin , Analysis of Recombination Mechanisms in InGaN-Based Light-Emitting Diodes from Electrical and Optical Characterizations , 2014 Asia Communications and Photonics Conference, Invited, Shanghai, China , 2014
4.   C.-H. Oh, D.-P. Han, H. Kim, K.-S. Kim, D.-S. Shin, and J.-I. Shim , Analysis of Radiative Recombination in InGaN-Based Light-Emitting Diodes Using Photoluminescence Excitation Spectroscopy , 10th international symposium on semiconductor light emitting devices, 2014 , 2014
3.   Jong-In Shim, Dong-Soo Shin , Advanced Characterization Techniques of p-(Al)GaN Layers in GaN-Based Light-Emitting Diodes , International Workshop on Nitride Semiconductors 2014, August 24-29, Wrocław, Poland , 2014
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