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10.   Joosun Yun, Dong-Pyo Han, Dong-Soo Shin, Hyundon Jung, Jong-In Shim , Theoretical and Experimental invertigation of Current, light and Temperature Distributions in GaN-based Light Emitting Diodes , Asia-Pacific Workshop on Widegap Semiconductors(APWS), We-P01 , 2011
9.   Dong-Pyo Han, Hyunsung Kim, Dong-Soo Shin, Han-YouI Ryu and Jong-In Shim , "Understanding of the temperature dependent electroluminescence in InGaN light emitting diodes" , 9th International Conference on Nitride Semiconductors(ICNS-9), PH3.10 , 2011
8.   Jong-In Shim , "The Saturated Radiative Recombination Rate of Importance to the Efficiency Droop in InGaN-based Light-Emitting Diodes" , NANO. 7th Handai Nanoscience and Nanotechnology International Symposium, B1, Invited , 2011
7.   Yuseong Jang, Dong-Hyun Jang, Jong-In Shim, Dong-Soo Shin , "Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model" , Proc. of SPIE vol. 7939 pp. 79392B-1-79392B-9, 01.23 , 2011
6.   Han-Youl Ryu and Jong-In Shim , "Inhomogeneous carrier distribution in InGaN multiple quantum wells and its influences on device performances" , Proc. of SPIE, vol. 7939, pp. 79390N-1-79390N-10, 01.23 , 2011
5.   Jun-Youn Kim, Yongjo Tak, Hyun-Gi Hong, Suhee Chae, Jae Won Lee, Hyoji Choi, Jae Kyun Kim, Bokki Min, Youngsoo Park , U-In Chung, Minho Kim, Seongsuk Lee, Namgoo Cha, Yoonhee Shin, Cheolsoo Sone, Jong-Ryeol Kim, and Jong-In Shim , "Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire" , Proc. of SPIE vol. 8123, pp. 81230A-1-81230A-6 , 2011
4.   Su-Ik Park, Jong-Ik Lee, Dong-Hyun Jang, Han-Youl Ryu, and Jong-In Shim , "Comparative Measurements of Internal Electric Field Intensity in InGaN/GaN Multiple Quantum Wells by Photocurrent and Electroreflectance spectroscopy" , Asia-Pacific Workshop on Widegap Semiconductors(APWS), Tu-A4 , 2011
3.   Karthikeyan Giri Sadasivam, Jong-In Shim, and June Key Lee , "Antimony Surfactant Effect on Green Emission InGaN/GaN Multi Quantum Wells Grown by MOCVD" , 8th International Conference on Nitride Semiconductors(ICNS-8), vol. 11, pp. 1787.1790, 10.20 , 2011
2.   Jong-In Shim, Hyunsung Kim, Dong-Soo Shin, and Han-Youl Ryu , "An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime rements in InGaN-based light emitting diodes" , Proc. of SPIE, vol. 7939, pp.79391A-1-79391A-8, 01.23 , 2011
1.   Hyun-sung Kim, Dong-Pyo Han, Jiyeon Oh, Jong-In Shim, Han-Youl Ryu, Yong-Tae Moon, Dae-Seob Han, and Joong-Seo Park , "A Measurement Method of Nonradiative Carrier Lifetime in InGaN/GaN Quantum Wells by Time-resolved Photoluminescence" , Asia-Pacific Workshop on Widegap Semiconductors(APWS), We-P40 , 2011

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