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6.   Mi-Hyang Sheen, Sung-Dae Kim, Jong-Hwan Lee, Jong-In Shim, and Young-Woon Kim , "V-pits as barriers to diffusion of carriers in InGaN/GaN quantum wells" , J. Electronic Materials, vol. 44, no. 11, pp. 4134-4138, , 2015
5.   Dong-Soo Shin, William S. C. Chang, and Paul K. L. Yu , "Enhancement in third-order output intercept point of high-power photodiodes by nonlinear voltage- and current-dependent responsivities" , Electron. Lett., vol. 51, no. 3, pp. 276-278, February 5 , 2015
4.   Hyo-Shik Choi, Dong-Guang Zheng, Hyunsung Kim, Jong-In Shim, and Dong-Soo Shin , "Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes" , J. Korean Phys. Soc., vol. 66, no. 10, May 2015, pp. 1554-1558 , 2015
3.   Dong-Pyo Han, Chan-Hyoung Oh, Hyunsung Kim, Jong-In Shim, Kyu-Sang Kim, and Dong-Soo Shin , "Conduction mechanisms of leakage currents in InGaN/GaN-based light-emitting diodes" , IEEE Trans. Electron Dev., vol. 62, no. 2, pp. 587-592, February , 2015
2.   Dong-Pyo Han, Chan-Hyoung Oh, Dong-Guang Zheng, Hyunsung Kim, Jong-In Shim, Kyu-Sang Kim, and Dong-Soo Shin , "Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes" , Jpn. J. Appl. Phys. 54, 02BA01, February , 2015
1.   Joosun Yun, Jong-In Shim, and Hideki Hirayama , "Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation" , Appl. Phys. Express, 8, 022104 , 2015

경기도 안산시 상록구 사3동 한양대학교 제2과학기술관 602호
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