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7.   Kyu-Sang Kim, Dong-Pyo Han, Hyun-Sung Kim, and Jong-In Shim , Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes , Appl. Phys. Lett. 104, 091110 (2014) , 2014
6.   Dong-Pyo Han, Dong-Guang Zheng, Chan-Hyoung Oh, Hyunsung Kim, Jong-In Shim, Dong-Soo Shin, and Kyu- Sang Kim , "Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements" , Appl. Phys. Lett. 104, 151108 , 2014
5.   Muhammad Usman, Hyunsung Kim, Jong-In Shim, and Dong-Soo Shin , "Measurement of piezoelectric field in single- and double-quantum-well green light-emitting diodes using electroreflectance spectroscopy" , Jpn. J. Appl. Phys., vol. 53, no. 9, pp. 098002-1–098002-3, September , 2014
4.   Jong-In Shim, Hyunsung Kim, Dong-Pyo Han, Dong-Soo Shin, Kyu Sang Kim , "Low temperature studies of the efficiency droop in InGaN-based light-emitting diodes" , Proc. SPIE, vol. 8986, 89861S-1, 2014 , 2014
3.   Dong-Pyo Han, Hyunsung Kim, Jong-In Shim, Dong-Soo Shin, and Kyu-Sang Kim , "Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes" , Appl. Phys. Lett. 105, 191114 , 2014
2.   Jung-Hong Min, Myungwoo Son, Si-Young Bae, Jun-Yeob Lee, Joosun Yun, MinJae Maeng, Dae-Gyeon Kwon, Yongsup Park, Jong-In Shim, Moon-Ho Ham, and Dong-Seon Lee , "Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes" , Opt. Express, vol. 22, no. S4, pp. A1040-A1050, May , 2014
1.   Kyu-Sang Kim, Dong-Pyo Han, Hyun-Sung Kim, and Jong-In Shim , "Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes" , Appl. Phys. Lett., 104 091110 , 2014

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