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179.   Dong-Soo Shin and Jong-In Shim , "Understanding microscopic properties of light-emitting diodes from macroscopic characterization: ideality factor, S-parameter, and internal quantum efficiency" , Phys. Status Solidi A, vol. 218, no. 9, pp. 2200042-1 - 2200042-6, May , 2022
178.   Seoung-Hwan Park, Jong-In Shim, and Dong-Soo Shin , "Theoretical studies on in-plane polarization characteristics of (11-20) nonpolar InGaN/GaN quantum-well structures grown on InGaN substrates" , J. Korean Phys. Soc., in press , 2022
177.   Koh Eun Lee, Rak Jun Choi, Hyunwoong Kang, Jong In Shim, Sang-Wan Ryu, Jaehee Cho, and June Key Lee , "Electrochemical Potentiostatic Activation for the Improvement of 270 nm AlGaN-Based UV-C Light-Emitting Diodes" , ECS J. Solid State Sci. Technol., vol. 11, no. 2, p. 025007, Feb. 21 , 2022
176.   Dong-Guang Zheng, Dong-Soo Shin, and Jong-In Shim , "Measuring the surface temperature of light-emitting diodes by thermoreflectance" , Jpn. J. App. Phys., vol. 60, no. 5, pp. 052003-1 - 052003-7, May 5 , 2021
175.   Da-Hoon Lee, Sang-Youl Lee, Jong-In Shim, Tae-Yeon Seong, and Hiroshi Amano , "Effects of Current, Temperature, and Chip Size on the Performance of AlGaInP-Based Red Micro-Light-Emitting Diodes with Different Contact Schemes" , ECS J. Solid State Sci. Technol., vol. 10, no. 9, p. 095001, , 2021
174.   Abu Bashar Mohammad Hamidul Islam, Jong-In Shim, Dong-Soo Shin, and Joon Seop Kwak , "Effect of Defects on Strain Relaxation in InGaN/AlGaN Multiple-Quantum-Well Near-Ultraviolet Light-Emitting Diodes" , Phys. Status Solidi A, vol. 219, no. 2, 2100418 , 2021
173.   Gyeong Won Lee, Yoonsuk Choi, Heejin Kim, Jongwoo Park, Jong-In Shim, and Dong-Soo Shin , "Analysis of transient degradation behaviors of organic light-emitting diodes under electrical stress" , Appl. Sci., vol. 11, no. 16, pp. 7627-1 - 7627-9, Aug. 19 , 2021
172.   Dong-Guang Zheng, Jong-In Shim, and Dong-Soo Shin , "Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increase" , Jpn. J. App. Phys., vol. 60, no. 3, pp. 032006-1 - 032006-6, Mar. 8 , 2021
171.   Dong-Pyo Han, Chan-Hyoung Oh, Dong-Soo Shin, Jong-In Shim, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki , "Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation" , J. Appl. Phys., vol. 128, no. 12, pp.123103-1-123103-8, 28 Sept. , 2020
170.   A. B. M. Hamidul Islam, Jong-In Shim, and Dong-Soo Shin , "Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green spectra" , Jpn. J. Appl. Phys., vol. 59, no. 3, p. 038001, Mar. , 2020
169.   Jong-Ho Kim, Yong Won Lee, Hyeong-Seop Im, Chan-Hyoung Oh, Jong-In Shim, Daesung Kang, Tae-Yeon Seong, and Hiroshi Amano , "Improvement of the light output of blue InGaN-based light emitting diodes by using a buried stripe-type n-contact and reflective bonding pad" , ECS J. Solid State Sci. Technol., vol. 9, no. 1, p. 015021 , 2020
168.   Dong‑Pyo Han, Gyeong Won Lee, Sangjin Min, Dong‑Soo Shin, Jong‑In Shim, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki , "Identifying the cause of thermal droop in GaInN‑based LEDs by carrier‑ and thermo‑dynamics analysis" , Sci. Rep., vol. 10, pp. 17433-1 - 17433-11, Oct. 15 , 2020
167.   Kyu-Sang Kim and Jong-In Shim , "Effect of interface state density of the AlGaN electron blocking layer/GaN barrier layer in InGaN blue light-emitting diodes" , J. Korean Phys. Soc., vol. 76, no. 6, pp. 522-526, March , 2020
166.   Jong-In Shim, Dong-Soo Shin, Chan-Hyoung Oh, and Hyundon Jung , "Active efficiency as a key parameter for understanding the efficiency droop in InGaN-based light-emitting diodes" , ECS J. Solid State Sci. Technol., vol. 9, no. 1, p. 015013 , 2020
165.   Dong-Pyo Han, Dong-Soo Shin, Jong-In Shim, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki , "Modified Shockley equation for GaInN-based light-emitting diodes: Origin of the power-efficiency degradation under high current injection" , IEEE J. Quantum Electron., vol. 55, no. 4, p. 3200311, Aug. , 2019
164.   A. B. M. Hamidul Islam, Jong-In Shim, and Dong-Soo Shin , "Measurement of the piezoelectric field in InGaN/AlGaN multiple-quantum-well near-ultraviolet light-emitting diodes by electroreflectance spectroscopy" , IEEE J. Quantum Electron., vol. 55, no. 5, p. 3200307, October , 2019
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