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Technology
System
Experimental Results
Contents
GDS
(Glow Discharge Spectroscopy)
Compositional depth profile in
epitaxial wafer
(atomic composition, doping
concentration)
IQE
(Internal Quantum Efficiency)
 
Originally developed
by Hanyang Univ.
Separate measurement of
the IQE and the LEE just
at room temp. without
any parameter assumptions
DOSA
(Designer for Optoelectronic
System Analysis)
 
Original technique developed
by Hanyang Univ.
3-dimensional analysis software
of current, voltage, and
temperature distributions
in a LED chip by electrical
circuit modeling
DOSA
(Designer for Optoelectronic
System Analysis)
 
Original technique developed
by Hanyang Univ.
Dynamic thermal flow
measurement system by
utilizing a periodic electric
pulse train
ER/PC Spectroscopy
Electroreflectance &
Photocurrent
 
Home-made system
Measurements of Internal
electric field, optical
absorption spectra, and
Stokes shift in QWs
TDEL/TDPL
Temperature Dependent
Electro/Photo-luminescence
 
Home-made system
IQE and carrier transport
in LED
TRPL
(Time-Resolved Photo-luminescence)
 Original techniques developed
by Hanyang Univ.
Radiative and nonradiative
carrier lifetimes and IQE
in QWs
Wafer bowing
Original techniques developed by Hanyang Univ.
2-D measurement
in epitaxial wafer from
2" to 6" bow/stress
/strain/PL spectrum
C-V
(Capacitance-Voltage)
 
Home-made system
 
 
 
LED Performance
Characterization combined with
 
 - C-V for bias, frequency,
   laser pumping
 - IQE
 - I-V
 - Photo-luminescence
 - Others
I-V
(Current-Voltage) 
 
Home-made system
 
 
Electrical performance analysis 
 
 - Current path
 - Carrier transport mechanism
 - Defect related luminescence
Reliability analysis
 
Home-made system
 
 
Reliability analysis
 
 - Low/high current  stress
 - High temperature stress
 - Junction temp. measurement.
 - Others

PHEMOS

Reveals invisible defects and failures. 

Detects faint emission caused by anomalies to quickly and accurately determine the failure location. 

SSPC
(Steady-State Photo-capacitance)
 
 DLOS
(Deep-Level Optical Spectroscopy)
 
Home-made system
 
 

 
 
Defect trap analysis
in epitaxial layers
 
 - Energy level
 - Density
 - Type
 - Cross-section
 - Others

Quick Check

 

Original techniques developed by Hanyang Univ.

Evaluation of electroluminescence characteristics in LED epitaxial wafers. 

Chamber

(Temperature-Dependent)

L-I-V analyze with Temperature-Dependent characteristic

PLATOM

(with sorter photoluminescence mapper)

Measurements of characteristic in wafer level

 

- Dominant Wavelength

- Peak Wavelength

- FWHM

- Bowing check

 

Angle of

Beam Spread

Measurement angular distribution of radiation.

Raman

Spectroscopic technique used to observe vibrational, rotational, and other low-frequency modes in a system.

Analysis molecule of material using stokes scattering.

경기도 안산시 상록구 사3동 한양대학교 제2과학기술관 602호
Room 602, Science & Technology Building II, Hanyang University, Ansan, Gyeonggi
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